LightMOS a new power semiconductor concept dedicated for lamp ballast application

38th IAS Annual Meeting on Conference Record of the Industry Applications Conference, 2003. Pub Date : 2003-10-12 DOI:10.1109/IAS.2003.1257610

E. Griebl, L. Lorenz, M. Purschel

引用次数: 10

Abstract

With the monolithic integration of a body diode into an IGBT structure, a very cost attractive solution for the lamp ballast application is introduced. Using the trench stop technology for lowest tail currents, switching losses and the overall power losses of the device are in the range of the latest MOSFET technologies using the compensation principle for lowest on state resistances.

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LightMOS是一种专门用于灯镇流器应用的新型功率半导体概念

通过将体二极管集成到IGBT结构中，介绍了一种非常具有成本吸引力的灯镇流器应用解决方案。采用沟槽停止技术实现最低尾电流，开关损耗和器件的整体功率损耗均在最新MOSFET技术的范围内，采用补偿原理实现最低导通状态电阻。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

38th IAS Annual Meeting on Conference Record of the Industry Applications Conference, 2003.

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