Electrostatic Modeling And ESD Damage Of Magnetoresistive Recording Heads

A. Wallash
{"title":"Electrostatic Modeling And ESD Damage Of Magnetoresistive Recording Heads","authors":"A. Wallash","doi":"10.1109/MRC.1995.658245","DOIUrl":null,"url":null,"abstract":"Figure 1 shows cross sectional and air bearing surface (ABS) views of the experimental MR-type structure used in this study. The unshielded sensor is 2.0 pm by 25 pm by 300 A. The leads are spaced 3.0 pm from a conductive substrate. From an electrostatic point of view this device can be viewed as a system of conductors and dielectrics. Specifically, the MR-type device shown in Fig. 1 is modeled as a thin-film resistor that is capacitively coupled to the substrate. important to note is that the capacitor that is formed between the leads and the substrate has one edge exposed to air when the device is lapped. This metal/air/metal combination at the air interface forms a spark gap between the leads and the substrate. Figure 2 shows the electrical model incorporating the interesting combination of resistive, capacitive and spark gap properties of this device.","PeriodicalId":129841,"journal":{"name":"Digest of the Magnetic Recording Conference 'Magnetic Recording Heads'","volume":"56 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of the Magnetic Recording Conference 'Magnetic Recording Heads'","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MRC.1995.658245","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

Abstract

Figure 1 shows cross sectional and air bearing surface (ABS) views of the experimental MR-type structure used in this study. The unshielded sensor is 2.0 pm by 25 pm by 300 A. The leads are spaced 3.0 pm from a conductive substrate. From an electrostatic point of view this device can be viewed as a system of conductors and dielectrics. Specifically, the MR-type device shown in Fig. 1 is modeled as a thin-film resistor that is capacitively coupled to the substrate. important to note is that the capacitor that is formed between the leads and the substrate has one edge exposed to air when the device is lapped. This metal/air/metal combination at the air interface forms a spark gap between the leads and the substrate. Figure 2 shows the electrical model incorporating the interesting combination of resistive, capacitive and spark gap properties of this device.
磁阻记录磁头的静电建模与ESD损伤
图1显示了本研究中使用的实验性mr型结构的横截面和空气承载面(ABS)视图。无屏蔽传感器为2.0 pm × 25pm × 300a。引线与导电基板间隔3.0 pm。从静电的观点来看,这个装置可以看作是导体和电介质的一个系统。具体来说,图1所示的mr型器件被建模为电容耦合到衬底的薄膜电阻。重要的是要注意的是,在引线和基板之间形成的电容器有一个边缘暴露在空气中,当器件被搭接。这种金属/空气/金属组合在空气界面形成引线和衬底之间的火花间隙。图2显示了结合电阻、电容和火花间隙特性的有趣组合的电气模型。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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