The quantum wells and quantum dots structure comparison on suppressing dark current

Abstract

We design and simulate three different quantum optoelectronic devices to study the effects of the quantum wells and quantum dots on suppressing the dark current. Through the simulation of the samples, we find that the inhibition ability of quantum wells is stronger than quantum dots at room temperature; at low temperature, quantum dots is stronger than quantum wells. The simulation result shows, when applied bias is about 0.01 V, the dark current of samples A is 9 × 10-13 A; at around 3 V, its dark current is about A. Sample A has already been made of the samples tested, the test found that the actual dark current and dark current simulated are almost the same. At the same time, we tested the PL spectra of samples A to further explain this phenomenon.