{"title":"Considerations for Developing a Highly Efficient, High-power Shortwave AM Transmitter","authors":"M. Yamazoe, K. Haeiwa, S. Hirose, K. Wakai","doi":"10.1109/PCCON.2007.373094","DOIUrl":null,"url":null,"abstract":"This paper describes a study on high power short-wave AM transmitter with high efficiency. First, we fabricated a new power amplifier operating at short-wave band (3M-30MHz) using RF MOSFETs and a new output circuit for obtaining high efficiency. Next, we proposed a new power combiner with excellent linearity by tuning the transmitter output circuit including stray capacitance and inductance. In addition, we proposed an evolutional short-wave AM transmitter since conventional MF band digital AM modulation method can not be introduced because of losses caused by parasitic diode of RF MOSFETs.","PeriodicalId":325362,"journal":{"name":"2007 Power Conversion Conference - Nagoya","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 Power Conversion Conference - Nagoya","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PCCON.2007.373094","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This paper describes a study on high power short-wave AM transmitter with high efficiency. First, we fabricated a new power amplifier operating at short-wave band (3M-30MHz) using RF MOSFETs and a new output circuit for obtaining high efficiency. Next, we proposed a new power combiner with excellent linearity by tuning the transmitter output circuit including stray capacitance and inductance. In addition, we proposed an evolutional short-wave AM transmitter since conventional MF band digital AM modulation method can not be introduced because of losses caused by parasitic diode of RF MOSFETs.