Research on the Gate-oxygen Aging Trend of Power Electronic Device

Abstract

The introduction of fully electric vehicles (FEVs) into the mainstream has raised concerns about the reliability of their electronic components such as IGBT. The great variability in Insulated Gate Bipolar Translator (IGBT) failure times caused by the very different operating conditions experienced and the stochasticity of their degradation processes suggests the adoption of condition-based maintenance approaches. Thus, the development of research for the aging process of IGBT is of key importance. In this paper, we investigate the results of performing accelerated aging experiments (Gate-oxide layer aging). Our objective is to discuss and analyze the curve of the IGBT gate-oxide layer aging process under long working hours. During the experiments, the switching characteristic parameters were measured in the different aging processes. According to the mechanism study, it can be found that the turn-off delay time and the turn-on delay time are related to Miller capacitance, and Miller capacitance is related to the degree of aging. In this paper, relevant aging parameters are screened for aging trend analysis. The results show that the gate oxide layer aging process of IGBT is gradual, and the aging process model of IGBT was finally established.