Edge domain dependent pinning effect by the stray field in the patterned magnetic tunnel junction

Abstract

The switching characteristic of the MTJ (magnetic tunnel junction) submicron pattern is investigated. The mechanism of the step in the M-H loop analyzed. In the M-H loop of the MTJ, which has a C-type domain, a step is created by pinning of the 360-degree domain wall, which is caused by the stray field originated in the pinned layer. The position of the steps in the M-H loops is dependent on the direction of the stray field from the pinned layer. The model explains the steps in the M-H loops obtained from the experiment.