Intrinsic gate delay and energy-delay product in junctionless nanowire transistors

Abstract

In this paper we investigate two important device metrics, intrinsic gate-delay and energy-delay product of triple-gate junctionless nanowire transistors (JNTs) with gate lengths from 22 nm down to 15 nm, for different channel doping concentrations and compare them with those of triple-gate inversion-mode (EVI) nanowire field-effect transistors. Our study shows although intrinsic gate-delay is larger in junctionless devices compared to those of EVI devices, since the switching energy is smaller in JNTs, energy-delay product is almost identical for both junctionless and IM devices.