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Tuning dot-specific effective g-factors in a GaAs/AlGaAs double quantum dot device confining a single hole.

Proposed for presentation at the International Conference on Electronic Properties of Two-Dimensional Systems (EP2DS) held October 31-November 5, 2021 in , . Pub Date : 2021-10-01 DOI:10.2172/1893809
A. Padawer-Blatt, J. Ducatel, A. Bogan, G. Austing, L. Gaudreau, P. Zawadzki, A. Sachrajda, S. Studenikin, L. Tracy, J. Reno, T. Hargett
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在限制单孔的GaAs/AlGaAs双量子点器件中调谐点特定有效g因子。
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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Proposed for presentation at the International Conference on Electronic Properties of Two-Dimensional Systems (EP2DS) held October 31-November 5, 2021 in , .
Proposed for presentation at the International Conference on Electronic Properties of Two-Dimensional Systems (EP2DS) held October 31-November 5, 2021 in , .
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