The influence of the stacked and double material gate structures on the short channel effects in SOI MOSFETs

Abstract

An asymmetric dual metal stack gate (DMSG) SOI MOSFET transistor has been investigated for its enhanced electrical characteristics. A 2-D physical model has been proposed and its results have been confirmed by those obtained by simulation. These results predict better short channel effects such as drain induced barrier lowering (DIBL) characteristics and hot carrier effects for this device compared to those for the conventional SOI MOSFET.