SiC MOSFET Based VSC Used in HVDC Transmission with DC Fault Protection Scheme

Abstract

Development in Silicon Carbide (SiC) semiconductor technology is gaining immense importance compared to the conventional silicon based semiconductor devices. Application areas where excellent level of efficiency, fast switching frequencies, very minimum switching losses and impressive performance under elevated temperatures is expected SiC provides the best results. Thus it plays a prominent role in future electrical grid technology. This paper analyses the performance of a SiC based voltage source converter (VSC) operating in HVDC transmission system under the DC fault condition. Simulations conducted on MATLAB/Simulink shows that proposed SiC based VSC-HVDC protection scheme reduces the DC short circuit fault current very quickly compared to the Si based VSC. Performance of three phase harmonic filters to eliminate the converter generated harmonics is also examined.