{"title":"Studies on Field and Impedance Variations with Object Height Inside TEM Cell","authors":"T. K. Seshadri, S.K. Das, B. Sinha","doi":"10.1109/ISEMC.1985.7566992","DOIUrl":null,"url":null,"abstract":"Susceptibility and emission measure ments of equipments inside TEM Cell requires accurate determination of field inside the cell in the presence of equipment under test. This paper describes an eigen function method in which different numerical techni ques such as successive integration and least square collocation based on quasi static approach are applied in estimating fields inside the cell. As a generalized case, the ground plane and the object width has been taken the same and an analysis has been carried out for various heights. The analysis can be easily extended to solve problems of specific EUT Size. The capacitance, impedance variations and field strength with respect to height has been plotted.","PeriodicalId":256770,"journal":{"name":"1985 IEEE International Symposium on Electromagnetic Compatibility","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1985-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1985 IEEE International Symposium on Electromagnetic Compatibility","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISEMC.1985.7566992","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Susceptibility and emission measure ments of equipments inside TEM Cell requires accurate determination of field inside the cell in the presence of equipment under test. This paper describes an eigen function method in which different numerical techni ques such as successive integration and least square collocation based on quasi static approach are applied in estimating fields inside the cell. As a generalized case, the ground plane and the object width has been taken the same and an analysis has been carried out for various heights. The analysis can be easily extended to solve problems of specific EUT Size. The capacitance, impedance variations and field strength with respect to height has been plotted.