Modified structural arrangement of InAs-based quantum dots and nanostructures for high efficiency multi-junction solar cells

Abstract

We present a new strategy to theoretically design InAs-based quantum dots (QD) and nanostructures (NS) by modifying the morphology of a multi-junction solar cell (MJSC). This InAs-based structural arrangement comprising of 24 QD each of radius 100 nm radius embedded in 6 NS layers result in cell efficiency of 47.03%, which is an enhancement of 13% over the previously reported structure with a configuration of 12 InP spacing layers and 169 QD each of radius 25 nm. The open circuit voltage obtained is 2.25 V and filling factor attained is 85.05%. The modified MJSC structure exhibits absorption response for a part of the NIR spectrum (900 - 1200) nm, which makes it an ideal prospect for cloudy conditions.We present a new strategy to theoretically design InAs-based quantum dots (QD) and nanostructures (NS) by modifying the morphology of a multi-junction solar cell (MJSC). This InAs-based structural arrangement comprising of 24 QD each of radius 100 nm radius embedded in 6 NS layers result in cell efficiency of 47.03%, which is an enhancement of 13% over the previously reported structure with a configuration of 12 InP spacing layers and 169 QD each of radius 25 nm. The open circuit voltage obtained is 2.25 V and filling factor attained is 85.05%. The modified MJSC structure exhibits absorption response for a part of the NIR spectrum (900 - 1200) nm, which makes it an ideal prospect for cloudy conditions.