Design of high-sensitivity plasmonics-assisted GaAs metal-semiconductor-metal photodetectors

A. Karar, N. Das, C. Tan, K. Alameh, Y. T. Lee
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引用次数: 8

Abstract

In this paper, we use the finite difference timedomain (FDTD) method to optimize the light absorption of an ultrafast plasmonic GaAs metal-semiconductor-metal photodetector (MSM-PD) employing metal nano-gratings. The MSM-PD is optimized geometrically, leading to improved light absorption near the designed wavelength of GaAs through plasmon-assisted electric and magnetic field concentration through a subwavelength aperture. Simulation results show up to 10-times light absorption enhancement at 867 nm due to surface plasmon polaritons (SPPs) propagation through the metal nano-grating, in comparison to conventional MSM-PD.
高灵敏度等离子体辅助砷化镓金属-半导体-金属光电探测器设计
本文采用时域有限差分(FDTD)方法优化了采用金属纳米光栅的超快等离子体砷化镓金属-半导体-金属光电探测器(MSM-PD)的光吸收。MSM-PD进行了几何优化,通过亚波长孔径的等离子体辅助电场和磁场浓度,提高了GaAs设计波长附近的光吸收。仿真结果表明,在867 nm处,由于表面等离子激元(SPPs)通过金属纳米光栅传播,与传统的MSM-PD相比,光吸收增强了10倍。
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