Body Diode Reverse Recovery Effects on SiC MOSFET Half-Bridge Converters

Abstract

The aim of this paper is to evaluate the impact of SiC MOSFET body diode reverse recovery on device switching speed limits. Half-bridge converter leg, composed of 1200V, 130A SiC MOSFETs in HIP 247-4L package, has been analyzed in this study and experimental tests have been conducted, evaluating the electrical stresses to which the power devices are subjected when they are operated in extreme conditions. Results highlight how reverse recovery process can be significantly affected by the operating conditions, in terms of current slopes and temperature.