Low-Frequency Noise Characteristics of Advanced Si and SiGe Bipolar Transistors

Abstract

also with Institut fur Materialphysik, Universitat Wien, andLudwig-Boltzmann-Institut fur Festkorperphysik,Wien, AustriaAbstractA comprehensive low- frequency noise characterization of advancedSi and SiGe bipolar transistors is presented. The Si transistors werefound to show higher low-frequency noise than the SiGe devices. Thisis proofed to be a consequence of the oxide grown at the poly-monosilicon interface in the case of the Si devices for the adjustmentof the current gain. The incorporation of Ge in the SiGe HBTs wasfound not to degrade the low-frequency noise performance in com-parison to the Si BTs.