Nano-scale evaluation of electrical tree initiation in silica/epoxy nano-composite thin film

T. Onishi, S. Hashimoto, M. Tomita, Takanobu Watanabe, K. Mura, T. Tsuda, T. Yoshimitsu
{"title":"Nano-scale evaluation of electrical tree initiation in silica/epoxy nano-composite thin film","authors":"T. Onishi, S. Hashimoto, M. Tomita, Takanobu Watanabe, K. Mura, T. Tsuda, T. Yoshimitsu","doi":"10.23919/ISEIM.2017.8088759","DOIUrl":null,"url":null,"abstract":"Many researchers have attempted use of nanocomposite (NC) materials for insulation systems at various places. A number of studies on the propagation of electrical trees have been reported, but it has not yet been clarified how the electrical tree occurs inside the NC material. In order to evaluate the origin of an electrical tree, it is important to clarify the breakdown mechanism at nano-scale. In this paper, silica/epoxy-resin NC was spin-coated on a silicon substrate and characterized by thin film analyses. The scanning electron microscope (SEM) indicates uniform dispersion of silica fillers in the NC film. The time-to-breakdown of the NC film, which is measured using micro-electrical probe system, is improved as the silica density increases. Furthermore, we succeeded in the scanning tunneling microscope (STM) observation of the NC film. Leakage sites appeared in the STM images, which were induced by the electric stress application with the STM tip. These approaches will invoke a deep understanding of the role of nano-fillers in the insulation resistance and the breakdown mechanism of NC materials.","PeriodicalId":222058,"journal":{"name":"2017 International Symposium on Electrical Insulating Materials (ISEIM)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 International Symposium on Electrical Insulating Materials (ISEIM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/ISEIM.2017.8088759","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

Many researchers have attempted use of nanocomposite (NC) materials for insulation systems at various places. A number of studies on the propagation of electrical trees have been reported, but it has not yet been clarified how the electrical tree occurs inside the NC material. In order to evaluate the origin of an electrical tree, it is important to clarify the breakdown mechanism at nano-scale. In this paper, silica/epoxy-resin NC was spin-coated on a silicon substrate and characterized by thin film analyses. The scanning electron microscope (SEM) indicates uniform dispersion of silica fillers in the NC film. The time-to-breakdown of the NC film, which is measured using micro-electrical probe system, is improved as the silica density increases. Furthermore, we succeeded in the scanning tunneling microscope (STM) observation of the NC film. Leakage sites appeared in the STM images, which were induced by the electric stress application with the STM tip. These approaches will invoke a deep understanding of the role of nano-fillers in the insulation resistance and the breakdown mechanism of NC materials.
二氧化硅/环氧纳米复合薄膜中电树起始的纳米级评价
许多研究人员在不同的地方尝试使用纳米复合材料(NC)作为绝缘系统。许多关于电树繁殖的研究已被报道,但尚未阐明电树如何在NC材料内发生。为了评估电树的起源,阐明纳米尺度上的击穿机制是很重要的。本文将二氧化硅/环氧树脂数控材料自旋涂覆在硅衬底上,并用薄膜分析对其进行表征。扫描电子显微镜(SEM)显示二氧化硅填料在NC膜中分布均匀。利用微电子探针系统测量的NC膜的击穿时间随着二氧化硅密度的增加而提高。此外,我们还成功地用扫描隧道显微镜(STM)对NC薄膜进行了观察。STM图像中出现了泄漏点,这是STM尖端施加电应力引起的。这些方法将引发对纳米填料在NC材料绝缘电阻中的作用和击穿机制的深刻理解。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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