Wafer bonding technique based GaN/Quantum Dots/GaN system

Abstract

Integration of colloidal semiconductor quantum dots with epitaxial semiconductor materials offers the possibility of a wide variety of new device structures. In this work, wafer bonding processes for layered GaN/Quantum Dots/GaN structures are described. Bonding is achieved by thermal reorganization of bidentate ligand thiophenethiol which initially caps the CdSe/ZnS core/shell quantum dots. Annealing temperature dependent bond strength feature is characterized. Maximum bond strength is achieved after annealing at 350°C. Effect of annealing on quantum dot photoluminescence is also investigated.