The study of MEMS millimeter wave phase shifter

F. Guo, Z. Lai, S.Z. Zhu, Z.Q. Zhu, R. Zhu, Y. Zheng, G. Yang, A.Z. Li
{"title":"The study of MEMS millimeter wave phase shifter","authors":"F. Guo, Z. Lai, S.Z. Zhu, Z.Q. Zhu, R. Zhu, Y. Zheng, G. Yang, A.Z. Li","doi":"10.1109/RAWCON.2002.1030170","DOIUrl":null,"url":null,"abstract":"Several designs of MEMS millimeter-wave phase shifters are presented. They consist of a coplanar waveguide (CPW) transmission line periodically loaded with 8/spl sim/32 metal bridges, functioning as capacitive switches. Every switching element consists of a thin metallic membrane actuated by applied bias. Remarkable phase shifter performances were observed. One MEMS phase shifter reached to 372/spl deg//3.5 mm under 20 V bias at 35 GHz, with an insertion loss (S/sub 21/) of about 4/spl sim/7 dB.","PeriodicalId":132092,"journal":{"name":"Proceedings RAWCON 2002. 2002 IEEE Radio and Wireless Conference (Cat. No.02EX573)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings RAWCON 2002. 2002 IEEE Radio and Wireless Conference (Cat. No.02EX573)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RAWCON.2002.1030170","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

Several designs of MEMS millimeter-wave phase shifters are presented. They consist of a coplanar waveguide (CPW) transmission line periodically loaded with 8/spl sim/32 metal bridges, functioning as capacitive switches. Every switching element consists of a thin metallic membrane actuated by applied bias. Remarkable phase shifter performances were observed. One MEMS phase shifter reached to 372/spl deg//3.5 mm under 20 V bias at 35 GHz, with an insertion loss (S/sub 21/) of about 4/spl sim/7 dB.
MEMS毫米波移相器的研究
介绍了几种MEMS毫米波移相器的设计。它们由共面波导(CPW)传输线组成,周期性加载8/spl sim/32金属桥,作为电容开关。每一个开关元件都由一个由外加偏压驱动的薄金属膜组成。观察到显著的移相性能。一个MEMS移相器在20v偏置下达到372/spl度//3.5 mm,插入损耗(S/sub 21/)约为4/spl sim/7 dB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信