Dispersion of Linearity in Broadband FET Circuits

A. Parker, J. Rathmell
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引用次数: 4

Abstract

A novel view of dispersion of linearity in broadband circuits is offered, whereby memory effects impart a frequency dependence to linearity of FET amplifiers. The considerable variation in intermodulation across wide bandwidths due to trapping and heating mechanisms are considered here as a dispersion of linearity that is bias dependent. This is of interest to designers because the dispersion gives intermodulation a strong dependence on center and spacing of test frequencies, which requires an interpretation of intermodulation measurements and specifications across the whole signal bandwidth. This is important for meeting legislative requirements or for designing for good spurious-free dynamic range, and for improving the performance of linearization techniques where band-limiting of optimal linear conditions may occur
宽带场效应晶体管电路中线性度的色散
提出了宽带电路中线性度色散的新观点,即记忆效应赋予FET放大器线性度的频率依赖性。由于捕获和加热机制导致的跨宽带互调的相当大的变化在这里被认为是与偏置相关的线性色散。设计人员对此很感兴趣,因为色散使互调强烈依赖于测试频率的中心和间隔,这需要对整个信号带宽的互调测量和规格进行解释。这对于满足立法要求或设计良好的无杂散动态范围以及改善线性化技术的性能非常重要,其中最优线性条件可能出现带限制
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