Study of Variations in Memory Window of Si: HfO2 Based MFIS-FET

Abstract

This paper has been dealt with ferroelectric behavior of silicon doped hafnium oxide using double gate MOSFET with different oxide thickness. The Variation in the drain cuurent with the gate voltage from -1.5V to 2.0V and 2.0V to -1.5V has been studied and these variations also compared with the conventional double gate MOSFET. The study mainly concentrates on the polarization behavior of silicon doped hafnium oxide and concludes to a result of increase in the memory window with the variation in the oxide thickness which is more helpful in making FRAM. Sentaurus TCAD is used to observe the memory window variations up to 0.80 mV with the gate voltage variation from -1 V to 2 V.