Assessment of SiC diode performance in non-isolated converters for LED lighting applications

O. Tetervenoks, I. Galkin
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Abstract

Today SiC Schottky diodes are becoming less expensive and more affordable in the market of electronic components. However, the price is still higher in comparison with common fast and ultrafast diodes with the same current and voltage rating. The main aim of this research is to find are the SiC diodes more advantageous in non-isolated converters for LED applications. From the one side SiC diodes have extremely fast reverse recovery time (reduced switching losses), from the other side they have higher forward voltage drop (higher conduction losses). In this case the evaluation of loss distribution between the conduction and switching losses is very important. This distribution may vary depending on topology, input-to-output voltage radio and output power. Several topologies are considered in the scope of this article: the most commonly used conventional buck topology, buck-boost topology and tapped-inductor topology.
用于LED照明应用的非隔离变换器中SiC二极管性能的评估
今天,SiC肖特基二极管在电子元件市场上变得越来越便宜,越来越实惠。然而,与具有相同电流和电压额定值的普通快速和超快二极管相比,价格仍然较高。本研究的主要目的是发现SiC二极管在LED应用的非隔离变换器中更有优势。从一方面来看,SiC二极管具有极快的反向恢复时间(减少开关损耗),从另一方面来看,它们具有更高的正向压降(更高的传导损耗)。在这种情况下,评估传导和开关损耗之间的损耗分布是非常重要的。这种分布可能根据拓扑结构、输入输出电压和输出功率而变化。本文考虑了几种拓扑:最常用的传统降压拓扑、降压升压拓扑和抽头电感拓扑。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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