An X/Ku-band bi-directional true time delay T/R chipset in 0.13 µm CMOS technology

Moon-Kyu Cho, Jang-hoon Han, Jinhyun Kim, Jeong‐Geun Kim
{"title":"An X/Ku-band bi-directional true time delay T/R chipset in 0.13 µm CMOS technology","authors":"Moon-Kyu Cho, Jang-hoon Han, Jinhyun Kim, Jeong‐Geun Kim","doi":"10.1109/MWSYM.2014.6848608","DOIUrl":null,"url":null,"abstract":"This paper presents an X/Ku-band bi-directional true time delay T/R chipset in 0.13 μm CMOS technology for wideband phased array antenna. The T/R chipset comprises of wideband bi-directional distributed gain amplifiers (BDGA), a 7-bit true time delay (TTD) circuit, and a 6-bit digital step attenuator. The tuning bits are included in TTD (2-bit) and DSA (2-bit) for the amplitude and group delay error correction. The T/R chipset shows the group delay variation of 198.4 ps with the LSB of 1.56 ps. The attenuator coverage of 31.5 dB with the LSB of 0.5 dB is achieved. The gain over -1 dB and the return losses of > 10 dB at 8.0-16.0 GHz are achieved. The gain flatness of T/R chipset is less than 2 dB at 8-16 GHz. The chip size is 2.65 × 1.47 mm2 including pads, and the DC power consumption is 275 mW only from the BDGAs. To authors' knowledge, this is the first demonstration of the CMOS-based bi-directional TTD T/R chipset at X/Ku-band.","PeriodicalId":262816,"journal":{"name":"2014 IEEE MTT-S International Microwave Symposium (IMS2014)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"22","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE MTT-S International Microwave Symposium (IMS2014)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2014.6848608","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 22

Abstract

This paper presents an X/Ku-band bi-directional true time delay T/R chipset in 0.13 μm CMOS technology for wideband phased array antenna. The T/R chipset comprises of wideband bi-directional distributed gain amplifiers (BDGA), a 7-bit true time delay (TTD) circuit, and a 6-bit digital step attenuator. The tuning bits are included in TTD (2-bit) and DSA (2-bit) for the amplitude and group delay error correction. The T/R chipset shows the group delay variation of 198.4 ps with the LSB of 1.56 ps. The attenuator coverage of 31.5 dB with the LSB of 0.5 dB is achieved. The gain over -1 dB and the return losses of > 10 dB at 8.0-16.0 GHz are achieved. The gain flatness of T/R chipset is less than 2 dB at 8-16 GHz. The chip size is 2.65 × 1.47 mm2 including pads, and the DC power consumption is 275 mW only from the BDGAs. To authors' knowledge, this is the first demonstration of the CMOS-based bi-directional TTD T/R chipset at X/Ku-band.
一种采用0.13µm CMOS技术的X/ ku波段双向真时延T/R芯片组
提出了一种用于宽带相控阵天线的0.13 μm CMOS技术的X/ ku波段双向真时延收发芯片组。该T/R芯片组由宽带双向分布式增益放大器(BDGA)、7位真时间延迟(TTD)电路和6位数字阶跃衰减器组成。调谐位包括在TTD(2位)和DSA(2位)中,用于幅度和群延迟纠错。T/R芯片组的组延迟变化为198.4 ps, LSB为1.56 ps,衰减器覆盖率为31.5 dB, LSB为0.5 dB。在8.0 ~ 16.0 GHz频段,增益大于-1 dB,回波损耗为10db。T/R芯片组在8-16 GHz时的增益平坦度小于2 dB。芯片尺寸为2.65 × 1.47 mm2(包括焊盘),仅BDGAs直流功耗为275 mW。据作者所知,这是基于cmos的X/ ku波段双向TTD T/R芯片组的首次演示。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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