Simulation of temperatures influence to photoelectric properties of silicon solar cells

Abstract

The method of digital modeling investigates influence of temperature on photoelectric processes in silicon solar cells. Feature of program system describes “Sentaurus TCAD” which is allowed to model silicon solar cells with flat p-n- junction. Results of research are received in the form of visual pictures of processing of volume of silicon with p-n- junction, processes of photogeneration of nonequilibrium carriers of a charge at illumination and thermal emissions at the account of various mechanisms of their recombination, and loading of I-V characteristic of solar cell at various temperatures. Results of estimation temperature factors of a current of short circuit J sc , open circuit voltage U oc , fill factor of I-V FF , the maximum power P m and efficiency ŋ for silicon solar cells without and with nanoparticles of metal are compared. It is noticed that despite high values of the basic photoelectric parameters of the solar cells containing nanoparticles of metal, than without them, temperature factors of target power and efficiency worsen a little. Means, in such cases acceptance of measures for cooling of solar cells is required. On the other hand, higher photosensitivity of plasmon solar cells is shown at low temperatures. There is a perspective possibility of creation high-sensitivity (plasmon) photosensors for a special purpose, working at low temperatures.