CMOS Chip for Solid-State Tactile Force Sensor

Sheng-Kai Yeh, Chao-Chun Ning, C. Yeh, S. Tseng, Y. Juang, W. Fang
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引用次数: 2

Abstract

This study presents a simple approach to design and implement a solid-state micro tactile force sensor using the standard CMOS process (Fig. 1). By using the inductive sensing mechanism with the magnetic force contact interface and the CMOS on-chip analog circuit, the normal force is detected by the inductance change of the sensing coil and readout by characterizing the frequency variation of the LC tank oscillator. The proposed micro tactile force sensor has two major merits: (1) the fabrication process of the proposed tactile sensor is straightforward, and the fragile suspended structure is not required to detect the tactile load. Therefore, the process issues and the design concerns of the unwanted deformation induced by the residual stress of the CMOS thin films can be avoided. (2) Taking the advantages of the standard CMOS process (TSMC 1P6M CMOS process), the sensing component and the processing circuitry are monolithically integrated for direct signal processing with a better signal-to-noise ratio (SNR). The measurement results verify the feasibility and functionality of the proposed micro tactile sensor. For future perspectives, the proposed device can be exploited to the applications required compact tactile force sensing system. Moreover, more processing circuit components can be incorporated monolithically to provide more versatilities.
用于固态触觉力传感器的CMOS芯片
本研究提出了一种采用标准CMOS工艺设计和实现固态微触觉力传感器的简单方法(图1)。通过具有磁力接触界面的感应传感机构和CMOS片上模拟电路,通过传感线圈的电感变化来检测法向力,并通过表征LC槽振荡器的频率变化来读出法向力。所提出的微触觉力传感器有两个主要优点:(1)所提出的触觉传感器制作工艺简单,不需要脆弱的悬吊结构来检测触觉载荷。因此,可以避免CMOS薄膜的残余应力引起的不必要的变形的工艺问题和设计问题。(2)利用标准CMOS工艺(台积电1P6M CMOS工艺),将传感元件与处理电路单片集成,直接进行信号处理,信噪比更高。测量结果验证了微触觉传感器的可行性和功能性。从未来的角度来看,该装置可以用于紧凑的触觉力传感系统的应用。此外,更多的处理电路元件可以单片集成,以提供更多的通用性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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