Propagation layers for intra-chip wireless interconnection compatible with packaging and heat removal

Abstract

Inserting an aluminum nitride (AlN) layer which acts as a dielectric propagating medium between a silicon wafer containing integrated antennas and a metal chuck emulating the role of a heat sink improves the antenna power transmission gain by /spl sim/8 dB at 15 GHz. AlN, with its high thermal conductivity, also alleviates the heat removal problem. With a 760-/spl mu/m AlN layer, an on-chip wireless connection is demonstrated over a 2.2-cm distance, which is 3/spl times/ the previously reported separation.