Performance Assessment of Dual Metal Graded Channel Negative Capacitance Junctionless FET for Digital/Analog field

Abstract

This work focuses on effect of negative capacitance on the Dual Metal Double Gate Graded Channel Junction Less Transistor(DMGC-JLT). The effect of dual metal with graded channel is combined with NCFET to study Ion/Ioff, SS, transconductance, transconductance generation factor and output conductance in comparison to DMGC-JLT. Simulation was carried out using Silvaco ATLAS tool and MATLAB. MATLAB tool is used to solve the 1-D L-K equation. Analyses of the variation in ferroelctric thickness and doping in channel is also performed. The simulation results showed better Ion/Ioff, lower SS, better transconductance and improvement in other factors which is beneficial for both digital and analog applications. Undoped ${HfO}_{2}$ is used as Ferro-electric Material for inducing the negative capacitance effect in baseline device.