Record efficiency and gain at 2.1 GHz of high power RF transistors for cellular and 3G base stations

Abstract

Improved RF performance of Motorola's next generation HV6 high power RF-LDMOS transistor is demonstrated. In the 2.1 GHz band, with a two-carrier WCDMA signal, a 29% drain efficiency is achieved at -37 dBc IM3 and 20 W of output power, along with a high power gain of over 16.5 dB. To our knowledge, this is the highest combination of efficiency and linearity ever reported on a high power part of any technology or material system in that frequency band. A PAE of 62% at 100 W (P/sub 3dB/) is also achieved.