Strategies for high energy ion implant

J. Kawski, J. Borland, J. P. O'connor
{"title":"Strategies for high energy ion implant","authors":"J. Kawski, J. Borland, J. P. O'connor","doi":"10.1109/ASMC.1996.558002","DOIUrl":null,"url":null,"abstract":"Summary form only given, as follows. Device Fab that employ High Energy (MeV)Ion Implant realize overall front end manufacturing cost reductions of up to 20%, For this reason MeV implant tools represent one of the fastest growing segments in the fab capital equipment market today. Implementing MeV implant into a process has new challenges for designers and process engineers alike. Process integration requires a logical strategy that fits a company's relative aggressiveness in implementing significant cost reduction measures. Production process development and sustaining engineering require understanding of the tool specifics and unique process challenges associated with MeV implant. This paper discusses various cost reduction scenarios. There will be a review of production confirmed process migration and implementation.","PeriodicalId":325204,"journal":{"name":"IEEE/SEMI 1996 Advanced Semiconductor Manufacturing Conference and Workshop. Theme-Innovative Approaches to Growth in the Semiconductor Industry. ASMC 96 Proceedings","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE/SEMI 1996 Advanced Semiconductor Manufacturing Conference and Workshop. Theme-Innovative Approaches to Growth in the Semiconductor Industry. ASMC 96 Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASMC.1996.558002","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

Summary form only given, as follows. Device Fab that employ High Energy (MeV)Ion Implant realize overall front end manufacturing cost reductions of up to 20%, For this reason MeV implant tools represent one of the fastest growing segments in the fab capital equipment market today. Implementing MeV implant into a process has new challenges for designers and process engineers alike. Process integration requires a logical strategy that fits a company's relative aggressiveness in implementing significant cost reduction measures. Production process development and sustaining engineering require understanding of the tool specifics and unique process challenges associated with MeV implant. This paper discusses various cost reduction scenarios. There will be a review of production confirmed process migration and implementation.
高能离子注入的策略
仅给出摘要形式,如下。采用高能(MeV)离子植入的设备晶圆厂实现了整体前端制造成本降低高达20%,因此,MeV植入工具是当今晶圆厂资本设备市场中增长最快的部分之一。在过程中实现MeV植入对设计人员和过程工程师都有新的挑战。流程集成需要一个符合公司在实施显著降低成本措施方面的相对进取性的逻辑策略。生产工艺开发和维护工程需要了解与MeV植入物相关的工具特性和独特的工艺挑战。本文讨论了各种降低成本的方案。将对生产确认的工艺迁移和实施进行审查。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信