Impact of Channel Doping Fluctuation and Metal Gate Work Function Variation in FD-SOI MOSFET for 5nm BOX Thickness

Abstract

This study presents the behavior of fully depleted silicon-on-insulator (FD-SOI) MOSFET by variation of channel doping concentration and work function of gate material. The channel doping concentration and work function of gate material are varied from 1012to 1019 cm-3and 4.4 to 4.8eV respectively. The investigation is presented for 5nm of silicon film thickness with 2nm and 5nm thickness of gate oxide and buried oxide (BOX) respectively. The comparative study of doping variation on several performance parameters has been characterized using Visual TCAD EDA Tool. The result shows that there is very sharp rise or fall in the device parameters value at very high doping (1019 cm-3), The required tuning of off current is also possible with respect to these variations as the 81 % sudden drop is noticed for 10 times increment in doping concentration from 1017 cm-3and at work function of 4.6eV.