Magneto-transport properties of strained GaInAs/InP single quantum wells

Abstract

Using magnetic and magneto-optical methods, the authors were able to determine various material parameters of the strained system GaInAs in InP. To investigate some of these parameters, they have grown various modulation doped single quantum wells. The quantum well composition of Ga/sub x/In/sub 1-x/As was varied from x = 0.4 to 0.55 and the well width from 1 to 15 nm. The effective in-plane electron masses were measured for the various compositions using cyclotron resonance and temperature dependent Shubnikov-de Haas measurements (SdH). The dependency of the carrier mobility of n- and p-modulation doped samples on the well width and the composition were investigated by the use of SdH and Hall measurements at 4 K and 77 K. Optical detected magnetic resonance investigations were carried out to determine the hole/electron g-factors.<>