Silicon quantum-dot transistors operating above 100 K

Abstract

Reports the fabrication and characterization of unique silicon quantum-dot transistors (QDTs) that demonstrate quantum as well as single-electron Coulomb blockade effects at temperatures above 100 K. They are also the first Si transistors that show interference between different modes of quantum waves in a cavity. The transistors were fabricated on SIMOX (separation by implanted oxygen) silicon wafer with the top silicon layer 70 nm thick.