Fabrication & characterization of SrTiO/sub 3/ oxygen sensor operating at very low temperature

Proceedings of IEEE Sensors 2003 (IEEE Cat. No.03CH37498) Pub Date : 2003-10-22 DOI:10.1109/ICSENS.2003.1279156

Y. Hu, O. Tan, W. Cao, W. Zhu

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引用次数: 1

Abstract

SrTiO/sub 3/ oxygen sensor were fabricated from synthesized SrTiO/sub 3/ and commercial SrTiO/sub 3/ using high-energy ball milling and the thick-film screen-printing techniques. The particle sizes, microstructural properties and oxygen sensing properties of the synthesized nano-structured SrTiO/sub 3/ oxygen sensor were characterized using X-ray diffraction (XRD) and gas sensing measurements. Experimental results showed that particle size of the powders were milled down to be around 20 nm. The effect of different annealing temperatures (400, 500, 600, 700 and 800/spl deg/C) on the gas sensing properties of the synthesized SrTiO/sub 3/ sensor to 20% oxygen was characterized. The commercial SrTiO/sub 3/ (with milling 0 hours and 120 hours) devices, annealed at 400/spl deg/C, were used as reference. The optimal relative resistance (R/sub nitrogen//P/sub oxygen/) value of 6.35 is obtained for the synthesized SrTiO/sub 3/ sample annealed at 400/spl deg/C and operating at 40/spl deg/C. This operating temperature is much lower than that of the normal low temperature metal oxide semiconducting oxygen gas sensors(300-500/spl deg/C) and SrTiO/sub 3/ oxygen gas sensors (>700/spl deg/C). The response and recovery times are 1.6 minutes and 5 minutes respectively. This is considered fast for near-room temperature operated sensor device. The detected range is 1-20% oxygen. This is a very wide range possible for a single type of sensor material.

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低温下SrTiO/sub - 3/氧传感器的制备与表征

以合成的SrTiO/ sub3 /和市售的SrTiO/ sub3 /为原料，采用高能球磨和厚膜丝网印刷技术制备了SrTiO/ sub3 /氧传感器。采用x射线衍射(XRD)和气敏测量对合成的纳米结构SrTiO/sub - 3/氧传感器的粒径、微观结构和氧敏性能进行了表征。实验结果表明，该粉体的粒径可降至20 nm左右。考察了不同退火温度(400、500、600、700和800/spl℃)对合成的SrTiO/ sub3 /传感器对20%氧的气敏性能的影响。以400℃退火的SrTiO/ sub3 /(铣削0小时和120小时)商用装置为参考。合成的SrTiO/ sub3 /样品在400/spl℃退火和40/spl℃下工作时的最佳相对电阻(R/亚氮//P/亚氧/)值为6.35。该工作温度远低于普通低温金属氧化物半导体氧传感器(300-500/spl℃)和SrTiO/sub - 3/氧传感器(>700/spl℃)。响应时间为1.6分钟，恢复时间为5分钟。对于近室温操作的传感器设备来说，这被认为是快速的。检测范围为1-20%氧气。对于单一类型的传感器材料来说，这是一个非常广泛的范围。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of IEEE Sensors 2003 (IEEE Cat. No.03CH37498)

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