Towards Improving Ionizing Radiation Tolerance of 3-D NAND Flash Memory

Abstract

In this paper we present characterization results of total ionizing dose (TID) effects on commercial 3-D NAND memory. We show the TID induced threshold voltage shift and bit error rate of the memory array. Based on the characterization results we present four system-level techniques that can mitigate TID effects of the commercial 3-D NAND memory.