Non-contact measurement of sheet resistance and leakage current: applications for USJ-SDE/halo junctions

Abstract

A powerful new tool for non-contact analysis of sheet resistance and leakage current in p-n junctions, based on junction photo-voltage analysis of carrier recombination, carrier spreading and loss in the junction, has been developed. The method has been demonstrated to be effective in measurements of p-n junctions from /spl sim/10 nm to >1 nm and over a dose range of /spl sim/10/sup 11/ to >10/sup 15/ ions/cm/sup 2/. RsL metrology is the first tool to provide dose metrology coverage over the full depth and dose range of CMOS transistor doping. The stability of the measurement results in an Rs repeatability for all junction conditions and does not require surface preparation, such as oxide strip, prior to measurement. RsL methods provide direct evaluation of junction leakage current, which is especially useful for shallow junction technology evaluation. The RsL probe has been incorporated into a fully-automated tool for in-line pilot line and production process development and production control applications.