Electron-phonon interaction of color centers in MgF2 and LiF-O,OH crystals

L. I. Shchepina, R. Shendrik, T. S. Lasareva, N. Ivanov
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Abstract

Low-temperature absorption spectra at temperatures of range of 7.2–300 K in MgF2 and LiF-O,OH crystals were studied to investigate the electron-phonon interaction of radiation-induced color centers in these crystals. The coupling strength (S) with the phonons of the lattice of electronic-vibrational transitions was determined from the ratio of intensities in the zero-phonon line and the integrated absorption band. The nature of the color centers associated eith the absorption band at 390 nm and the emission at 490 nm in LiF-O,OH crystals and for the absorption band at 370 nm and the emission at 420 nm in MgF2 crystals was determined from value of S.
MgF2和LiF-O,OH晶体中色中心的电子-声子相互作用
研究了MgF2和LiF-O,OH晶体在7.2-300 K范围内的低温吸收光谱,以研究这些晶体中辐射诱导色心的电子-声子相互作用。电子-振动跃迁晶格与声子的耦合强度(S)由零声子线与集成吸收带的强度之比确定。根据S值测定了LiF-O,OH晶体中390 nm吸收带和490 nm发射带以及MgF2晶体中370 nm吸收带和420 nm发射带的色心性质。
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