AlGaN photodiodes for UVC, UVB and UVA spectral ranges

2015 IEEE NW Russia Young Researchers in Electrical and Electronic Engineering Conference (EIConRusNW) Pub Date : 2015-05-07 DOI:10.1109/EICONRUSNW.2015.7102225

I. Lamkin, M. Andreev, S. Tarasov, A. Solomonov, S. Kurin

引用次数: 2

Abstract

A technology of ultraviolet photodiodes based on Me-AlGaN Schottky barrier separating in UVA, UVB and UVC spectral ranges was proposed. The effect of altering the AlGaN soild solution composition on the long-wavelength edge of photosensitivity of fabricated photodetector was studied. Influence of Schottky barrier metal on the value of structures photosensitivity was examined.

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AlGaN光电二极管用于UVC, UVB和UVA光谱范围

提出了一种基于Me-AlGaN肖特基势垒分离UVA、UVB和UVC光谱范围的紫外光电二极管技术。研究了改变AlGaN固溶体组成对制备的光电探测器长波长边缘光敏性的影响。考察了肖特基势垒金属对结构光敏性的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2015 IEEE NW Russia Young Researchers in Electrical and Electronic Engineering Conference (EIConRusNW)

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