A 39 GHz Power Amplifier with High Output Power and High Efficiency for 5G Communication System

Abstract

In this paper, a 39 GHz power amplifier (PA) is designed in 40-nm CMOS process for 5G communication system. By means of a deep class-AB differential common source PA topology, with the inductive source degeneration and optimized power combining techniques, the output power and power efficiency of the proposed PA are further improved. At 39 GHz, the two stage PA achieves peak power-added efficiency (PAEmax) of 31.8%, saturated output power (Psat) of 21.6 dBm, and power gain of 23.5 dB.