A high precision comparison of the quantized Hall resistance of MOSFET and GaAs/AlGaAs heterostructure devices [measurement units application]

Abstract

We report comprehensive high precision direct and indirect comparisons of MOSFET and GaAs heterostructure quantized Hall resistors, and of steps 1, 2, 3, 4 and 6 for heterostructure devices. We find no difference between the MOSFET and the heterostructure Hall resistance at a level of better than 1 part in 10/sup 9/ (ppb).<>