Design and development of (1.2-2.7) GHz GaN HEMT based broadband power amplifier

Abstract

Design, fabrication, assembly and S-parameters measurement results of a (1.2-2.7) GHz Microwave integrated circuit (MIC) power amplifier using gallium nitride (GaN) based high electron mobility transistor (HEMT) is presented. The output power of 38.5 dBm to 39.2 dBm with over 10 ±1 dB power gain is achieved. The power added efficiency (PAE) of 17% to 33% has been achieved over the band of (1.2-2.7) GHz with drain bias voltage of 25 Volts. The amplifier is operated in CW mod. MIC power amplifier has been designed using CGH40010F device. The main challenge in designing the broadband high power amplifier with flat gain is to achieve proper source and load impedance matching. The major application of wideband power amplifier is in electronic warfare and high end security communication.