{"title":"1kW S-band Solid State radar amplifier","authors":"Ju-Young Kwack, Ki-Won Kim, Samuel Cho","doi":"10.1109/WAMICON.2011.5872866","DOIUrl":null,"url":null,"abstract":"A GaN based highly integrated Solid State Power Amplifier (SSPA) is developed for S-band radar applications. The power amplifier delivers more than 1 KW within a 400 MHz bandwidth with 55 dB gain and a typical 34% PAE. The SSPA includes a negative voltage supply, sequential bias circuit, and temperature sensor circuit. Its compact and lightweight design is suitable for many radar applications.","PeriodicalId":253374,"journal":{"name":"WAMICON 2011 Conference Proceedings","volume":"51 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"WAMICON 2011 Conference Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WAMICON.2011.5872866","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 13
Abstract
A GaN based highly integrated Solid State Power Amplifier (SSPA) is developed for S-band radar applications. The power amplifier delivers more than 1 KW within a 400 MHz bandwidth with 55 dB gain and a typical 34% PAE. The SSPA includes a negative voltage supply, sequential bias circuit, and temperature sensor circuit. Its compact and lightweight design is suitable for many radar applications.