Surface potential based Analytical Modeling of Graded Channel Strained High-k Gate stack Dual-Material Double Gate MOSFET

Abstract

Gate work function engineered MOSFET coupled with the channel and dielectric engineering benefits has always been an important topic owing to their supreme immunity over Short Channel Effects (SCEs). In this paper, the analytical model of a Graded Channel Strained High-k Gate stack Dual-Material Double Gate MOSFET has been presented by solving the Poisson's equation in 2D and following parabolic potential approximation approach. The analytical results have been substantiated by ATLAS simulated data.