CMOS Integrated FET-based Detectors for Radiation from 0.7-3.6THz

Abstract

This paper reports on integrated FET-based terahertz detectors operating in discrete frequencies spanning from 0.7-3.6THz. They are fabricated in standard 180nm CMOS process technology, and occupies a 2.7×3.0 mm2 chip area. Based on the Dyakonov and Shur theory, multi-pixel detectors are implemented by strict performance optimization and process compatibility. The simulated results demonstrate a promising application in low-cost terahertz spectrometer and imaging fields.