InGaAs/InAsSb Strained Layer Superlattice Infrared Detectors

2019 IEEE Research and Applications of Photonics in Defense Conference (RAPID) Pub Date : 2019-08-01 DOI:10.1109/rapid.2019.8864392

G. Ariyawansa, J. Duran, C. Reyner, J. Scheihing

引用次数: 0

Abstract

This work presents III-V strained layer superlattice (SLS) detectors with an emphasis on InGaAs/InAsSb SLS designs. Compared to conventional InAs/In(Ga)Sb and InAs/InAsSb designs, InGaAs/InAsSb enables a wider design space for performance improvements. Various SLS designs and experimental results are provided and discussed.

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InGaAs/InAsSb应变层超晶格红外探测器

本文介绍了III-V应变层超晶格(SLS)探测器，重点是InGaAs/InAsSb SLS设计。与传统的InAs/In(Ga)Sb和InAs/InAsSb设计相比，InGaAs/InAsSb为性能改进提供了更广阔的设计空间。提供并讨论了各种SLS设计和实验结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2019 IEEE Research and Applications of Photonics in Defense Conference (RAPID)

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