20 kW, 50 kHz SiC Power Converter for High Speed Switched Reluctance Machine

S. S. Ahmad, Chetan Urabinahatti, G. Narayanan
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引用次数: 3

Abstract

This paper reports design and testing of an SiC devices based three phase asymmetric H-bridge converter capable of switching at 50 kHz and intended to drive high-speed switched reluctance machines of speeds up-to 50,000 rpm. The power converter architecture is presented. Selection of SiC MOSFETs and diodes for the given power rating and specifications are discussed. Other subsystems of the converter are also described. Test results are presented for the asymmetric H-bridge converter at 800 V dc bus voltage and 50 A of load current. The MOSFET and diode losses are calculated for the given test condition. The respective junction temperatures and the heat-sink temperature are also estimated. Thermal image is presented for validation of estimated heat-sink temperature. The power converter is used to operate two high-speed SRM prototypes.
用于高速开关磁阻电机的20kw, 50khz SiC功率变换器
本文报道了一种基于SiC器件的三相非对称h桥变换器的设计和测试,该变换器的开关频率为50 kHz,旨在驱动速度高达50,000 rpm的高速开关磁阻电机。介绍了功率变换器的结构。讨论了给定额定功率和规格的SiC mosfet和二极管的选择。文中还介绍了该变换器的其他子系统。给出了非对称h桥变换器在直流母线电压为800 V、负载电流为50 A时的测试结果。在给定的测试条件下计算了MOSFET和二极管的损耗。并对结温和热沉温度进行了估计。为验证预估的热沉温度,给出了热图像。该功率转换器用于运行两个高速SRM原型机。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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