Diameter dependence of scattering limited transport properties of Si nanowire MOSFETs under uniaxial tensile strain

Abstract

Effects of the diameter on the drain current of uniaxially strained Si nanowire (NW) MOSFETs are investigated. Based on the deterministic solution of the multi-subband Boltzmann transport equation, the drain current is calculated considering the intravalley acoustic phonon scatterings, intervalley phonon scatterings and interface roughness scatterings. We found 3 nm diameter [110] oriented Si NW MOSFETs shows ~2X drain current enhancement by the 1% uniaxial tensile strain.