Design considerations on the low-voltage MOSFET applications to wheelchair drive systems

Industrial Electronics, 2002. ISIE 2002. Proceedings of the 2002 IEEE International Symposium on Pub Date : 1900-01-01 DOI:10.1109/ISIE.2002.1025954

G. Belverde, M. Candelargiu, C. Guastella, M. Melito, S. Musumeci, A. Raciti

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引用次数: 6

Abstract

The paper deals with the application of MOSFETs, as switching devices, in a low-voltage power converter, which is devoted to an electric-driven wheelchair. The characteristics of the MOSFETs have a major impact on the whole performances of the drive system. The used devices are out of the traditional cell-structure MOSFETs, and they present interesting characteristics due to the advanced design rules typical of the VLSI processes. These MOSFETs can carry current up to 150 A, with a breakdown voltage in the range 20 V-50 V. The paper starts with the description of some technological issues. In particular, the paper focuses on the innovations and the improved performances in comparison to those of standard devices. Laboratory tests are carried out aiming to characterize the device looking for the specific application in a full bridge inverter. Finally, considerations and design criteria, in order to reduce the total power losses in the actual AC motor drive for wheelchair applications, are presented.

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低压MOSFET应用于轮椅驱动系统的设计考虑

本文讨论了mosfet作为开关器件在电动轮椅低压电源变换器中的应用。mosfet的特性对驱动系统的整体性能有重大影响。所使用的器件超出了传统的细胞结构mosfet，由于VLSI工艺的先进设计规则，它们呈现出有趣的特性。这些mosfet可以承载高达150 A的电流，击穿电压在20 V-50 V范围内。本文首先阐述了一些技术问题。本文重点介绍了与标准器件相比的创新和性能的提高。针对该器件在全桥逆变器中的具体应用，进行了实验室测试。最后，为了减少轮椅用交流电机驱动的总功率损耗，提出了考虑因素和设计标准。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Industrial Electronics, 2002. ISIE 2002. Proceedings of the 2002 IEEE International Symposium on

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