Ni/Co/Ni/TiN structure for highly thermal immune NiSi for CMOSFETs application

Abstract

In this paper, a novel Ni/Co/Ni/TiN structure to improve the thermal stability of NiSi by forming highly thermal stable ternary phase, i.e., (Co/sub x/Ni/sub 1-x/)Si/sub 2/ especially at the top region of NiSi is proposed. The Ni/Co/Ni/TiN structure is very promising for the nanoscale MOSFET technology which needs the ultra shallow junction and high temperature post silicidation processes.