Engineering three-dimensional Schottky interfaces towards efficient extraction of plasmonic hot electrons

Abstract

Photodetectors harnessing hot carrier generation on surface plasmon resonant nanoantennas are a promising avenue to achieving sub-bandgap imaging at room temperature. However, efficient extraction of plasmonic hot carriers under low-energy infrared (IR) excitation predicates careful design of Schottky interfaces. This work reports on the simulation-guided fabrication of Au (i) planar diodes and (ii) embedded IR nanoantennas interfaced with both n-/p-type Si and GaAs semiconductors in order to elucidate the impact of their electronic properties on photocurrent generation.