Simulation of spontaneous emission power on silicon based quantum dot with variation of light source and dot size

Abstract

The spontaneous emission power of silicon-based quantum dot has been simulated. Using one-dimensional quantum dot approach on quantum box model, the transition of electrons from ground energy to a higher energy level (inter-band transitions) can be described by evaluating the time-dependent Schrödinger equation. By varying the dot size (1 nm, 2 nm, and 4 nm), different values of effective band-gap will be obtained. Using the perturbation theory, with dot size and light source variations, the power of the spontaneous emission can be obtained. With those variations, one kind of laser and an optimum dot size which can produce the highest spontaneous emission power can be acquired, that is by XeF laser radiation with 2 nm of quantum dot size.