{"title":"High Sensitivity Resonant X-band Thin Film Magneto-dielectric SIW Sensor","authors":"N. Tiwari, S. Singh, M. Akhtar","doi":"10.1109/IMaRC45935.2019.9118621","DOIUrl":null,"url":null,"abstract":"A thin film dielectric and magneto-dielectric X- band sensing using the substrate integrated waveguide (SIW) is proposed. The sensor is designed by etching a complementary split ring resonator (CSRR) at the center of the SIW waveguide E-plane. The designed resonant sensor structure facilitates the testing of samples without a need for fitting them precisely inside the SIW cavity. Moreover, the presence of maximum electric field at the center of E-plane helps to achieve the relatively higher perturbation and hence higher sensitivity. The Q-factor (107) and sensitivity (12.3%) of the designed sensor is found to be relatively higher than the microstrip counterpart (8.9%, 54). The developed sensor is experimentally tested for the number of standard test specimens, and the results are in good agreement with their reference values.","PeriodicalId":338001,"journal":{"name":"2019 IEEE MTT-S International Microwave and RF Conference (IMARC)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE MTT-S International Microwave and RF Conference (IMARC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMaRC45935.2019.9118621","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
A thin film dielectric and magneto-dielectric X- band sensing using the substrate integrated waveguide (SIW) is proposed. The sensor is designed by etching a complementary split ring resonator (CSRR) at the center of the SIW waveguide E-plane. The designed resonant sensor structure facilitates the testing of samples without a need for fitting them precisely inside the SIW cavity. Moreover, the presence of maximum electric field at the center of E-plane helps to achieve the relatively higher perturbation and hence higher sensitivity. The Q-factor (107) and sensitivity (12.3%) of the designed sensor is found to be relatively higher than the microstrip counterpart (8.9%, 54). The developed sensor is experimentally tested for the number of standard test specimens, and the results are in good agreement with their reference values.